KDS3512 MOSFET

KDS3512 KDS3512

KDS3512 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KDS3512
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 80 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 4 A
  • Drain-Source Capacitance: 58 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 3 nS
  • Maximum Drain-Source On-State Resistance: 0.07 Ohm
  • Total Gate Charge: 13 nC
  • Maximum Power Dissipation: 2.5 W
  • Package: SOP-8