KDW258P MOSFET

KDW258P KDW258P
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KDW258P MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KDW258P
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 12 V
  • Maximum Gate-Source Voltage: 8 V
  • Maximum Gate-Threshold Voltage: 1.5 V
  • Maximum Drain Current: 9 A
  • Drain-Source Capacitance: 1943 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 23 nS
  • Maximum Drain-Source On-State Resistance: 0.011 Ohm
  • Total Gate Charge: 61 nC
  • Maximum Power Dissipation: 1.3 W
  • Package: TSSOP-8

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