KE3587-G MOSFET

KE3587-G KE3587-G

KE3587-G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KE3587-G
  • Type of Control Channel: NP -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 8 V
  • Maximum Gate-Threshold Voltage: 1 V
  • Maximum Drain Current: 4 A
  • Drain-Source Capacitance: 175 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 17 nS
  • Maximum Drain-Source On-State Resistance: 0.045 Ohm
  • Total Gate Charge: 11.2 nC
  • Maximum Power Dissipation: 1.15 W
  • Package: SOT-163