KF10N60P MOSFET

KF10N60P KF10N60P

KF10N60P MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KF10N60P
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Drain Current: 10 A
  • Drain-Source Capacitance: 140 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 35 nS
  • Maximum Drain-Source On-State Resistance: 0.59 Ohm
  • Total Gate Charge: 26 nC
  • Maximum Power Dissipation: 178 W
  • Package: TO220AB