KF10N65F MOSFET

KF10N65F KF10N65F
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KF10N65F MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KF10N65F
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 650 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4.5 V
  • Maximum Drain Current: 10 A
  • Drain-Source Capacitance: 140 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 35 nS
  • Maximum Drain-Source On-State Resistance: 0.95 Ohm
  • Total Gate Charge: 24 nC
  • Maximum Power Dissipation: 46 W
  • Package: TO-220IS

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