KML0D4N20E MOSFET

KML0D4N20E KML0D4N20E
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KML0D4N20E MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KML0D4N20E
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 6 V
  • Maximum Gate-Threshold Voltage: 1 V
  • Maximum Drain Current: 0.4 A
  • Drain-Source Capacitance: 15 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 3 nS
  • Maximum Drain-Source On-State Resistance: 0.7 Ohm
  • Total Gate Charge: 555 nC
  • Maximum Power Dissipation: 0.21 W
  • Package: SOT-416

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