KP11N60F MOSFET

KP11N60F KP11N60F
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KP11N60F MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KP11N60F
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 11 A
  • Drain-Source Capacitance: 800 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 35 nS
  • Maximum Drain-Source On-State Resistance: 0.38 Ohm
  • Total Gate Charge: 20 nC
  • Maximum Power Dissipation: 34.7 W
  • Package: TO-220IS

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