KP8M10 MOSFET

KP8M10 KP8M10
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KP8M10 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KP8M10
  • Type of Control Channel: NP -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 7 A
  • Drain-Source Capacitance: 200 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 10 nS
  • Maximum Drain-Source On-State Resistance: 0.024 Ohm
  • Total Gate Charge: 8.4 nC
  • Maximum Power Dissipation: 2 W
  • Package: SOP-8

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