KP8N65D MOSFET

KP8N65D KP8N65D
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KP8N65D MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KP8N65D
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 650 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 8 A
  • Drain-Source Capacitance: 500 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 25 nS
  • Maximum Drain-Source On-State Resistance: 0.62 Ohm
  • Total Gate Charge: 21 nC
  • Maximum Power Dissipation: 78 W
  • Package: IPAK

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