KQB12P20 MOSFET

KQB12P20 KQB12P20
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KQB12P20 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KQB12P20
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 200 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 11.5 A
  • Drain-Source Capacitance: 190 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 195 nS
  • Maximum Drain-Source On-State Resistance: 0.47 Ohm
  • Total Gate Charge: 31 nC
  • Maximum Power Dissipation: 120 W
  • Package: TO-263

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