KQB27P06 MOSFET

KQB27P06 KQB27P06
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KQB27P06 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KQB27P06
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 25 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 27 A
  • Drain-Source Capacitance: 510 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 185 nS
  • Maximum Drain-Source On-State Resistance: 0.07 Ohm
  • Total Gate Charge: 33 nC
  • Maximum Power Dissipation: 120 W
  • Package: TO-263

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