KQB2N30 MOSFET

KQB2N30 KQB2N30
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KQB2N30 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KQB2N30
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 300 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 2.1 A
  • Drain-Source Capacitance: 25 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 26 nS
  • Maximum Drain-Source On-State Resistance: 3.7 Ohm
  • Total Gate Charge: 3.7 nC
  • Maximum Power Dissipation: 40 W
  • Package: TO-263

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