KQB2N80 MOSFET

KQB2N80 KQB2N80

KQB2N80 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KQB2N80
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 800 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 2.4 A
  • Drain-Source Capacitance: 45 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 30 nS
  • Maximum Drain-Source On-State Resistance: 6.3 Ohm
  • Total Gate Charge: 12 nC
  • Maximum Power Dissipation: 85 W
  • Package: TO-263