KQB3N30 MOSFET

KQB3N30 KQB3N30
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KQB3N30 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KQB3N30
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 300 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 3.2 A
  • Drain-Source Capacitance: 40 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 40 nS
  • Maximum Drain-Source On-State Resistance: 2.2 Ohm
  • Total Gate Charge: 5.5 nC
  • Maximum Power Dissipation: 55 W
  • Package: TO-263

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