KQB4P40 MOSFET

KQB4P40 KQB4P40
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KQB4P40 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KQB4P40
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 400 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 3.5 A
  • Drain-Source Capacitance: 80 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 55 nS
  • Maximum Drain-Source On-State Resistance: 3.1 Ohm
  • Total Gate Charge: 18 nC
  • Maximum Power Dissipation: 85 W
  • Package: TO-263

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