KQB630 MOSFET

KQB630 KQB630
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KQB630 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KQB630
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 200 V
  • Maximum Gate-Source Voltage: 25 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 9 A
  • Drain-Source Capacitance: 85 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 75 nS
  • Maximum Drain-Source On-State Resistance: 2 Ohm
  • Total Gate Charge: 19 nC
  • Maximum Power Dissipation: 78 W
  • Package: TO-263

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