KQB6N25 MOSFET

KQB6N25 KQB6N25

KQB6N25 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KQB6N25
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 250 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 5.5 A
  • Drain-Source Capacitance: 50 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 65 nS
  • Maximum Drain-Source On-State Resistance: 1 Ohm
  • Total Gate Charge: 6.6 nC
  • Maximum Power Dissipation: 63 W
  • Package: TO-263