KQB6N70 MOSFET

KQB6N70 KQB6N70
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KQB6N70 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KQB6N70
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 700 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 6.2 A
  • Drain-Source Capacitance: 125 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 70 nS
  • Maximum Drain-Source On-State Resistance: 1.5 Ohm
  • Total Gate Charge: 30 nC
  • Maximum Power Dissipation: 142 W
  • Package: TO-263

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