KQB9N50 MOSFET

KQB9N50 KQB9N50
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KQB9N50 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KQB9N50
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 500 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 9 A
  • Drain-Source Capacitance: 160 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 95 nS
  • Maximum Drain-Source On-State Resistance: 0.73 Ohm
  • Total Gate Charge: 28 nC
  • Maximum Power Dissipation: 147 W
  • Package: TO-263

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