KQD1P50 MOSFET

KQD1P50 KQD1P50
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KQD1P50 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KQD1P50
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 500 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 5 V
  • Maximum Drain Current: 1.2 A
  • Drain-Source Capacitance: 40 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 25 nS
  • Maximum Drain-Source On-State Resistance: 10.5 Ohm
  • Total Gate Charge: 11 nC
  • Maximum Power Dissipation: 38 W
  • Package: TO-252

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