KQS4900 MOSFET

KQS4900 KQS4900
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KQS4900 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KQS4900
  • Type of Control Channel: NP -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 1.95 V
  • Maximum Drain Current: 1.3 A
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 21 nS
  • Maximum Drain-Source On-State Resistance: 0.55 Ohm
  • Total Gate Charge: 1.6 nC
  • Maximum Power Dissipation: 2 W
  • Package: SOP-8

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