KTD2005 MOSFET

KTD2005 KTD2005
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KTD2005 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KTD2005
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Drain Current: 1 A
  • Drain-Source Capacitance: 60 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 22 nS
  • Maximum Drain-Source On-State Resistance: 0.26 Ohm
  • Total Gate Charge: 6 nC
  • Maximum Power Dissipation: 0.8 W
  • Package: TSSOP-8

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