KTS1C1S250 MOSFET

KTS1C1S250 KTS1C1S250
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KTS1C1S250 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KTS1C1S250
  • Type of Control Channel: NP -Channel
  • Maximum Drain-Source Voltage: 250 V
  • Maximum Gate-Source Voltage: 25 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 0.75 A
  • Drain-Source Capacitance: 51 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 11 nS
  • Maximum Drain-Source On-State Resistance: 1.4 Ohm
  • Total Gate Charge: 15 nC
  • Maximum Power Dissipation: 1.6 W
  • Package: SOP-8

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