KU3600N10W MOSFET

KU3600N10W KU3600N10W
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KU3600N10W MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KU3600N10W
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 1.7 A
  • Drain-Source Capacitance: 25 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 15 nS
  • Maximum Drain-Source On-State Resistance: 0.36 Ohm
  • Total Gate Charge: 4.2 nC
  • Maximum Power Dissipation: 2 W
  • Package: SOT-223

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