KX7N10L MOSFET


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KX7N10L MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: KX7N10L
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 100 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Gate-Threshold Voltage: 2 V
- Maximum Drain Current: 1.7 A
- Drain-Source Capacitance: 55 pF
- Maximum Operating Junction Temperature: 150 °C
- Rise Time: 100 nS
- Maximum Drain-Source On-State Resistance: 0.35 Ohm
- Total Gate Charge: 4.6 nC
- Maximum Power Dissipation: 2 W
- Package: SOT-223