KX7N10L MOSFET

KX7N10L KX7N10L

KX7N10L MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: KX7N10L
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2 V
  • Maximum Drain Current: 1.7 A
  • Drain-Source Capacitance: 55 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 100 nS
  • Maximum Drain-Source On-State Resistance: 0.35 Ohm
  • Total Gate Charge: 4.6 nC
  • Maximum Power Dissipation: 2 W
  • Package: SOT-223