L1N60A MOSFET

L1N60A L1N60A
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L1N60A MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: L1N60A
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 1 A
  • Drain-Source Capacitance: 16 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 9.9 nS
  • Maximum Drain-Source On-State Resistance: 11.5 Ohm
  • Total Gate Charge: 5.2 nC
  • Maximum Power Dissipation: 9 W
  • Package: TO-92

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