L1N60I MOSFET

L1N60I L1N60I
TransistorData.com is not an official representative or the creator of the MOSFET L1N60I Transistor. Copyrighted materials belong to their respective owners. Please Note: Users can download the official L1N60I transistor datasheet in PDF, pin diagram, pnp pinout circuit and equivalent transistor data.

L1N60I MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: L1N60I
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 1 A
  • Drain-Source Capacitance: 16 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 9.9 nS
  • Maximum Drain-Source On-State Resistance: 11.5 Ohm
  • Total Gate Charge: 5.2 nC
  • Maximum Power Dissipation: 28 W
  • Package: TO-251

Top L1N60I Equivalent Transistors