L2N60I MOSFET

L2N60I L2N60I
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L2N60I MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: L2N60I
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 2 A
  • Drain-Source Capacitance: 30 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 12 nS
  • Maximum Drain-Source On-State Resistance: 5 Ohm
  • Total Gate Charge: 9.3 nC
  • Maximum Power Dissipation: 34 W
  • Package: TO-251

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