LDN9926ET1G MOSFET

LDN9926ET1G LDN9926ET1G

LDN9926ET1G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: LDN9926ET1G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 0.9 V
  • Maximum Drain Current: 6 A
  • Drain-Source Capacitance: 105 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 10 nS
  • Maximum Drain-Source On-State Resistance: 0.029 Ohm
  • Total Gate Charge: 5 nC
  • Maximum Power Dissipation: 2 W
  • Package: SOP-8