LDP9933ET1G MOSFET

LDP9933ET1G LDP9933ET1G
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LDP9933ET1G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: LDP9933ET1G
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 1.4 V
  • Maximum Drain Current: 3.6 A
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 35 nS
  • Maximum Drain-Source On-State Resistance: 0.06 Ohm
  • Total Gate Charge: 6 nC
  • Maximum Power Dissipation: 1.1 W
  • Package: SOP-8