LND150N3 MOSFET

LND150N3 LND150N3
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LND150N3 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: LND150N3
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 500 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Drain Current: 0.03 A
  • Drain-Source Capacitance: 2 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 450 nS
  • Maximum Drain-Source On-State Resistance: 0.85 Ohm
  • Maximum Power Dissipation: 0.74 W
  • Package: TO92

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