LSI1012XT1G MOSFET

LSI1012XT1G LSI1012XT1G
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LSI1012XT1G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: LSI1012XT1G
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: A
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 6 V
  • Maximum Gate-Threshold Voltage: 0.9 V
  • Maximum Drain Current: 0.5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 5 nS
  • Maximum Drain-Source On-State Resistance: 0.7 Ohm
  • Total Gate Charge: 0.75 nC
  • Maximum Power Dissipation: 0.15 W
  • Package: SC-89