NUS5530MNR2G MOSFET

NUS5530MNR2G NUS5530MNR2G
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NUS5530MNR2G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: NUS5530MNR2G
  • Type of Control Channel: P -Channel
  • SMD Transistor Code: 5530
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 1.2 V
  • Maximum Drain Current: 3.9 A
  • Drain-Source Capacitance: 400 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 22 nS
  • Maximum Drain-Source On-State Resistance: 0.06 Ohm
  • Total Gate Charge: 9.7 nC
  • Maximum Power Dissipation: 1.3 W
  • Package: DFN8

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