NVB5426N MOSFET

NVB5426N NVB5426N

NVB5426N MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: NVB5426N
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 120 A
  • Drain-Source Capacitance: 1000 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 100 nS
  • Maximum Drain-Source On-State Resistance: 0.006 Ohm
  • Total Gate Charge: 150 nC
  • Maximum Power Dissipation: 215 W
  • Package: D2PAK