NVB5860N MOSFET

NVB5860N NVB5860N
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NVB5860N MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: NVB5860N
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 220 A
  • Drain-Source Capacitance: 1125 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 117 nS
  • Maximum Drain-Source On-State Resistance: 0.003 Ohm
  • Total Gate Charge: 180 nC
  • Maximum Power Dissipation: 283 W
  • Package: D2PAK

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