NVB60N06 MOSFET

NVB60N06 NVB60N06
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NVB60N06 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: NVB60N06
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 60 A
  • Drain-Source Capacitance: 660 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 180.7 nS
  • Maximum Drain-Source On-State Resistance: 0.014 Ohm
  • Total Gate Charge: 62 nC
  • Maximum Power Dissipation: 150 W
  • Package: D2PAK

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