NVD4C05N MOSFET

NVD4C05N NVD4C05N
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NVD4C05N MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: NVD4C05N
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: 4C05N
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.2 V
  • Maximum Drain Current: 90 A
  • Drain-Source Capacitance: 725 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 107 nS
  • Maximum Drain-Source On-State Resistance: 0.0041 Ohm
  • Total Gate Charge: 31 nC
  • Maximum Power Dissipation: 57 W
  • Package: DPAK

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