NVD5802N MOSFET

NVD5802N NVD5802N
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NVD5802N MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: NVD5802N
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: 5802N
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.5 V
  • Maximum Drain Current: 101 A
  • Drain-Source Capacitance: 850 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 52 nS
  • Maximum Drain-Source On-State Resistance: 0.0044 Ohm
  • Total Gate Charge: 75 nC
  • Maximum Power Dissipation: 93.75 W
  • Package: DPAK

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