NVD5807N MOSFET

NVD5807N NVD5807N

NVD5807N MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: NVD5807N
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: 5807N
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 23 A
  • Drain-Source Capacitance: 96 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 111 nS
  • Maximum Drain-Source On-State Resistance: 0.031 Ohm
  • Total Gate Charge: 12.6 nC
  • Maximum Power Dissipation: 33 W
  • Package: DPAK