NVGS3130N MOSFET

NVGS3130N NVGS3130N
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NVGS3130N MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: NVGS3130N
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: VS9
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 8 V
  • Maximum Gate-Threshold Voltage: 1.4 V
  • Maximum Drain Current: 5.6 A
  • Drain-Source Capacitance: 169 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 7.3 nS
  • Maximum Drain-Source On-State Resistance: 0.024 Ohm
  • Total Gate Charge: 13.2 nC
  • Maximum Power Dissipation: 1.1 W
  • Package: TSOP-6

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