NVMD6N03R2G MOSFET

NVMD6N03R2G NVMD6N03R2G
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NVMD6N03R2G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: NVMD6N03R2G
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: E6N03
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 6 A
  • Drain-Source Capacitance: 210 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 22 nS
  • Maximum Drain-Source On-State Resistance: 0.032 Ohm
  • Total Gate Charge: 19 nC
  • Maximum Power Dissipation: 2 W
  • Package: SOIC-8

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