NX2020P1 MOSFET

NX2020P1 NX2020P1

NX2020P1 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: NX2020P1
  • Type of Control Channel: P -Channel
  • SMD Transistor Code: 2E
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 0.9 V
  • Maximum Drain Current: 4 A
  • Drain-Source Capacitance: 105 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 33 nS
  • Maximum Drain-Source On-State Resistance: 0.058 Ohm
  • Total Gate Charge: 14 nC
  • Maximum Power Dissipation: 1.7 W
  • Package: DFN2020MD-6

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