OM60N10SC MOSFET

OM60N10SC OM60N10SC
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OM60N10SC MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: OM60N10SC
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 60 A
  • Drain-Source Capacitance: 1100 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 270 nS
  • Maximum Drain-Source On-State Resistance: 0.025 Ohm
  • Total Gate Charge: 120 nC
  • Maximum Power Dissipation: 130 W
  • Package: TO-258AA

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