P50B6EA MOSFET

P50B6EA P50B6EA
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P50B6EA MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: P50B6EA
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.5 V
  • Maximum Drain Current: 50 A
  • Drain-Source Capacitance: 355 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 225 nS
  • Maximum Drain-Source On-State Resistance: 0.0085 Ohm
  • Total Gate Charge: 50 nC
  • Maximum Power Dissipation: 62.5 W
  • Package: TO-252

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