PDM6UT20V08E MOSFET

PDM6UT20V08E PDM6UT20V08E
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PDM6UT20V08E MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: PDM6UT20V08E
  • Type of Control Channel: NP -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 8 V
  • Maximum Gate-Threshold Voltage: 1.1 V
  • Maximum Drain Current: 0.6 A
  • Drain-Source Capacitance: 23 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Maximum Drain-Source On-State Resistance: 0.5 Ohm
  • Maximum Power Dissipation: 0.17 W
  • Package: SOT-363

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