PDNM8TP20V6E MOSFET

PDNM8TP20V6E PDNM8TP20V6E
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PDNM8TP20V6E MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: PDNM8TP20V6E
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 1 V
  • Maximum Drain Current: 6 A
  • Drain-Source Capacitance: 90 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 210 nS
  • Maximum Drain-Source On-State Resistance: 0.024 Ohm
  • Total Gate Charge: 18 nC
  • Maximum Power Dissipation: 1.5 W
  • Package: TSSOP-8

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