PDNM8TP20V7E MOSFET

PDNM8TP20V7E PDNM8TP20V7E

PDNM8TP20V7E MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: PDNM8TP20V7E
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 1 V
  • Maximum Drain Current: 7 A
  • Drain-Source Capacitance: 125 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 448 nS
  • Maximum Drain-Source On-State Resistance: 0.02 Ohm
  • Total Gate Charge: 16.2 nC
  • Maximum Power Dissipation: 1.3 W
  • Package: TSSOP-8

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