PHK4NQ20T MOSFET


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PHK4NQ20T MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: PHK4NQ20T
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 200 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Gate-Threshold Voltage: 4 V
- Maximum Drain Current: 4 A
- Drain-Source Capacitance: 155 pF
- Maximum Operating Junction Temperature: 150 °C
- Rise Time: 10 nS
- Maximum Drain-Source On-State Resistance: 0.13 Ohm
- Total Gate Charge: 26 nC
- Maximum Power Dissipation: 6.25 W
- Package: SOT96-1