PHM12NQ20T MOSFET

PHM12NQ20T PHM12NQ20T
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PHM12NQ20T MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: PHM12NQ20T
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 200 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 14.4 A
  • Drain-Source Capacitance: 155 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 10.2 nS
  • Maximum Drain-Source On-State Resistance: 0.13 Ohm
  • Total Gate Charge: 26 nC
  • Maximum Power Dissipation: 62.5 W
  • Package: QLPAK

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