PHM25NQ10T MOSFET

PHM25NQ10T PHM25NQ10T
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PHM25NQ10T MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: PHM25NQ10T
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 30.7 A
  • Drain-Source Capacitance: 275 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 10 nS
  • Maximum Drain-Source On-State Resistance: 0.03 Ohm
  • Total Gate Charge: 26.6 nC
  • Maximum Power Dissipation: 62.5 W
  • Package: QLPAK

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